STMicroelectronics launches 700V PowerGaN chips for AI servers and robotics

By AI, Created 10:15 AM UTC, May 26, 2026, /AGP/ – STMicroelectronics has introduced seven new 700V gallium nitride power transistors aimed at improving efficiency and power density in AI servers, robotics, industrial systems and consumer devices. The parts are in production now and available through ST’s eSTore and distributors starting at $0.63 per 1,000-unit orders.

Why it matters: - The new 700V PowerGaN devices target power systems that are straining conventional silicon limits, especially as AI servers use more electricity. - Higher efficiency and higher power density can reduce system size, weight and heat in applications such as robotics, industrial power supplies and smart-grid converters. - STMicroelectronics is positioning GaN as a broader option for medium-power and high-power designs across electrification markets.

What happened: - STMicroelectronics introduced seven new 700V gallium nitride power transistors in its STPOWER PowerGaN portfolio. - The devices are in production now. - The parts are available through the company’s announcement, the eSTore and distributors. - Pricing starts at $0.63 to $2.25 for orders of 1,000 pieces.

The details: - The new devices are enhancement-mode transistors, or HEMTs, with continuous current ratings from 6 A to 29 A. - Typical RDS(on) ranges from 53 mΩ to 270 mΩ. - ST says the parts use GaN traits such as low conduction loss, very low switching loss at high frequencies and zero reverse-recovery charge. - Those characteristics are intended to support reliable high-power operation and higher-frequency power-conversion topologies. - The devices can replace MOSFETs in power-conversion circuits or enable new higher-frequency designs. - Running at higher switching frequencies can reduce magnetics and passive component size, which helps create a more compact power stage. - The parts are qualified to ST’s reliability standards. - ST packages the devices in DPAK, TO-LL and PowerFLAT surface-mount formats. - TO-LL and PowerFLAT versions include a Kelvin source connection to separate gate control from the main power path. - ST says that improves noise immunity, protects the gate driver and preserves timing margin. - The seven parts are SGT350R70GTK, SGT070R70HTO, SGT080R70ILB, SGT105R70ILB, SGT140R70ILB, SGT190R70ILB and SGT240R70ILB. - The TO-LL part is rated at 26 A with 53 mΩ typical RDS(on). - The PowerFLAT 8x8 parts cover 29 A, 21.7 A, 17 A, 11.5 A and 10 A versions with typical RDS(on) from 60 mΩ to 165 mΩ. - The DPAK part is rated at 6 A with 270 mΩ typical RDS(on).

Between the lines: - ST is betting that GaN’s efficiency and switching advantages will matter more as AI, industrial and robotics systems demand denser power conversion. - The launch broadens ST’s voltage coverage and gives designers more options for swapping in GaN without changing their overall power architecture. - The company is also signaling that packaging and thermal design remain as important as the transistor itself for real-world adoption.

What’s next: - ST says it will continue expanding the PowerGaN portfolio with additional voltage ratings and features. - The company expects the technology to support future AI servers, humanoid robotics, industrial power and advanced consumer appliances, including home appliances. - Designers can begin sourcing the new 700V parts now through ST’s sales channels.

The bottom line: - STMicroelectronics is moving GaN deeper into mainstream power electronics with seven new 700V parts built for efficiency, density and lower heat in demanding systems.